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| SB120-SB160 Vishay Lite-On Power Semiconductor 1.0A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die construction for transient protection D D D D High surge capability Low power loss, high efficiency Surge overload rating to 40A peak For use in low voltage, high frequency inverters, free wheeling, and polarity protection application 94 9369 D High current capability and low forward voltage drop D Plastic material has UL flammability classification 94V-0 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type SB120 SB130 SB140 SB150 SB160 Symbol VRRM =VRWM =VR V Value 20 30 40 50 60 40 1 -65...+150 Unit V V V V V A A C Peak forward surge current Average forward current Junction and storage temperature range TL=100C IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Thermal resistance junction to lead Thermal resistance junction to ambient Test Conditions IF=1A TA=25C TA=100C VR=4V, f=1MHz TL=const. Type SB120-140 SB150-160 Symbol Min Typ VF VF IR IR CD CD RthJL RthJA Max 0.5 0.7 0.5 10 110 80 15 50 Unit V V mA mA pF pF K/W K/W SB120-140 SB150-160 Rev. A2, 24-Jun-98 1 (4) SB120-SB160 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 1000 Tj = 25C C - Diode Capacitance ( pF ) f = 1 MHz 1.0 SB120 - SB140 100 SB150 - SB160 D 0.5 0 25 15285 10 50 75 100 125 150 15288 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 20 IF - Forward Current ( A ) 10 SB120 - SB140 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 I R - Reverse Current ( mA ) 10 T = 100C j 1.0 Tj = 75C 0.1 0.01 Tj = 25C SB150 - SB160 1.0 Tj = 25C IF Pulse Width = 300 s 0.1 0.1 15286 0.5 0.9 1.3 1.7 2.1 15289 0.001 0 20 40 60 80 100 120 140 VF - Forward Voltage ( V ) Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 40 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Single Half Sine-Wave (JEDEC Method) Tj = 150C 30 20 10 0 1 10 Number of Cycles at 60 Hz 100 15287 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 SB120-SB160 Vishay Lite-On Power Semiconductor Dimensions in mm 14443 Case: Molded Plastic Polarity: Cathode Band Approx. Weight: 0.3 grams Mounting Position: Any Marking: Tupe Number Rev. A2, 24-Jun-98 3 (4) SB120-SB160 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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